Thank you for your interest in 115721-0001 available NSN part on NSN Sphere. Microcircuit Memory is listed with the part number 115721-0001, and its manufacturer is Thales Usa Inc. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like 115721-0001, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Thales Usa Inc. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5962013333430 under FSC 5962 Microcircuits Electronic and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-333-3430 Item Description: Microcircuit Memory | 5962 | 013333430 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
115721-0001 | 5 | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC60 00 MILLIAMPERES MAXIMUM SUPPLY |
MEMORY | ABKW | OVERALL HEIGHT0 357 INCHES MINIMUM AND 0 432 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 172 INCHES MINIMUM AND 0 217 INCHES MAXIMUM |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
MEMORY | ADAQ | BODY LENGTH1 490 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING350 0 MILLIWATTS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
MEMORY | CQZP | INPUT CIRCUIT PATTERN26 INPUT |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
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