Thank you for your interest in SMJ2516-35JM available NSN part on NSN Sphere. Microcircuit Memory is listed with the part number SMJ2516-35JM, and its manufacturer is Texas Instruments Incorporated. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like SMJ2516-35JM, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Texas Instruments Incorporated. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5962011587419 under FSC 5962 Microcircuits Electronic and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-158-7419 Item Description: Microcircuit Memory | 5962 | 011587419 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Smj2516-35jm | 3 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 600 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 205 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING285 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDLOW POWER AND ERASABLE AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
MEMORY | CRHL | BIT QUANTITY16384 |
MEMORY | CSWJ | WORD QUANTITY2048 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC350 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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