Thank you for your interest in VP1008M available NSN part on NSN Sphere. Transistor is listed with the part number VP1008M, and its manufacturer is Siliconix Ltd. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like VP1008M, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Siliconix Ltd. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5961013521800 under FSC 5961 Semiconductor Devices and Associated Hardware and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 0.190 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ABMK | OVERALL WIDTH | 0.145 INCHES NOMINAL |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
AXGY | MOUNTING METHOD | TERMINAL |
CTQX | CURRENT RATING PER CHARACTERISTIC | 0.28 AMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
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