Thank you for your interest in 2058089 9 available NSN part on NSN Sphere. Microcircuit Memory is listed with the part number 2058089 9, and its manufacturer is Raytheon Company. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like 2058089 9, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Raytheon Company. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5962012188483 under FSC 5962 Microcircuits Electronic and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
MRC | Criteria | Characteristic |
---|---|---|
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CRHL | (NON-CORE DATA) BIT QUANTITY | 4096 |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 512 |
ADAU | BODY HEIGHT | 0.150 INCHES MAXIMUM |
ADAQ | BODY LENGTH | 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CZEQ | TIME RATING PER CHACTERISTIC | 15.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
CZER | MEMORY DEVICE TYPE | ROM |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND SCHOTTKY AND 3-STATE OUTPUT AND PROGRAMMABLE |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
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