Thank you for your interest in S82S131F 883B available NSN part on NSN Sphere. Microcircuit Memory is listed with the part number S82S131F 883B, and its manufacturer is Philips Semiconductors Ltd. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like S82S131F 883B, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Philips Semiconductors Ltd. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5962011737792 under FSC 5962 Microcircuits Electronic and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-173-7792 Item Description: Microcircuit Memory | 5962 | 011737792 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
S82s131f 883b | 2 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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