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Quality guaranteed We sell only warrantied and traceable partsThank you for your interest in 6306-1J available NSN part on NSN Sphere. Microcircuit Memory is listed with the part number 6306-1J, and its manufacturer is Mmi Amd. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like 6306-1J, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Mmi Amd. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5962010397345 under FSC 5962 Microcircuits Electronic and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 625.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | CHEYENNE AIRCRAFT MODEL 427M |
| CBBL | FEATURES PROVIDED | BIPOLAR AND HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/DISABLE AND W/ENABLE AND W/STORAGE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | -0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 11530-278539 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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