Thank you for your interest in JR29681DR available NSN part on NSN Sphere. Microcircuit Memory is listed with the part number JR29681DR, and its manufacturer is Fairchild Semiconductor Ltd. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like JR29681DR, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Fairchild Semiconductor Ltd. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5962014679859 under FSC 5962 Microcircuits Electronic and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-467-9859 Item Description: Microcircuit Memory | 5962 | 014679859 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Jr29681dr | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
TTQY | Terminal Type And Quantity | 24 PRINTED CIRCUIT |
CZEQ | Time Rating Per Chacteristic | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
TEST | Test Data Document | 81349-MIL-PRF-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
CQZP | Input Circuit Pattern | 14 INPUT |
CQSJ | Inclosure Material | CERAMIC AND GLASS |
ADAT | Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
CWSG | Terminal Surface Treatment | SOLDER |
CBBL | Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT |
MRC | Decoded Requirement | Clear Text Reply |
ADAQ | Body Length | 1.290 INCHES MAXIMUM |
AEHX | Maximum Power Dissipation Rating | 1.02 WATTS |
ADAU | Body Height | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
FEAT | Special Features | BUILT UNDER MIL SPEC MIL-PRF-38510/21 |
CTFT | Case Outline Source And Designator | D-3 MIL-M-38510 |
CQSZ | Inclosure Configuration | DUAL-IN-LINE |
AFGA | Operating Temp Range | -55.0/+125.0 DEG CELSIUS |
ZZZK | Specification/Standard Data | 81349-MIL-PRF-38510/21 GOVERNMENT SPECIFICATION |
CZER | Memory Device Type | ROM |
CZEN | Voltage Rating And Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
CQWX | Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
CZZZ | Memory Capacity | UNKNOWN |
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