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Quality guaranteed We sell only warrantied and traceable partsThank you for your interest in 1DT203L20TDB available NSN part on NSN Sphere. Microcircuit Memory is listed with the part number 1DT203L20TDB, and its manufacturer is Epson Electronics America Inc. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like 1DT203L20TDB, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Epson Electronics America Inc. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5962014912679 under FSC 5962 Microcircuits Electronic and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-491-2679 Item Description: Microcircuit Memory | 5962 | 014912679 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1dt203l20tdb | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 155.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RADAR THREAT EMITTER AN/MST-T1; M3P REU-L |
| CBBL | FEATURES PROVIDED | HIGH SPEED AND LOW POWER AND ASYNCHRONOUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS ASYNCHRONOUS FIFO |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL ACCESS |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
| FEAT | SPECIAL FEATURES | 2,048 X 9-BIT; THIN CERAMIC DIP |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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