Thank you for your interest in 1372FW1061-002 available NSN part on NSN Sphere. Microcircuit Memory is listed with the part number 1372FW1061-002, and its manufacturer is Bae Systems Information And Electronic Systems Integration I. This NSN part is currently available for purchase through our website today, and you may begin the process by filling out the following RFQ form. By providing us with information such as what parts you need, when you need them by, and your target price, our team can present you with a personalized quote that has been specifically tailored to fit your individual needs and requirements. Once you have submitted your request, a dedicated account manager will review and reach out to you in 15 minutes or less to continue the purchasing process.
As a leading online distributor of NSN parts like 1372FW1061-002, we provide customers access to an expansive database of new, used, and obsolete items that have been sourced from top global manufacturers such as Bae Systems Information And Electronic Systems Integration I. If you are facing an AOG situation or time constraint, we provide same-day delivery and expedited shipping on a number of items. Get started on the purchasing process for NSN 5962013732813 under FSC 5962 Microcircuits Electronic and experience how NSN Sphere can serve as your strategic sourcing partner for all of your operational needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-373-2813 Item Description: Microcircuit Memory | 5962 | 013732813 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1372fw1061-002 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC45 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSITIVE ALTERED ITEMMAKE FROM PN 5962-8752901LAPROGRAMMED PER 1062-U56 P82FD137200061-001CHECKSUM F4B0 NHA PN 1372AE1062 |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROGRAMMED |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC6 00 INPUT PICOFARADS MAXIMUM AND 8 00 OUTPUT PICOFARADS MAXIMUM |
MEMORY | ADAQ | BODY LENGTH1 260 INCHES MINIMUM AND 1 280 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND ULTRAVIOLET ERASABLE AND COMPATIBLE CMOS AND PROGRAMMED AND TESTED TO MIL-STD-883 |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES MAXIMUM SUPPLY |
MEMORY | ADAU | BODY HEIGHT0 180 INCHES MINIMUM AND 0 200 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONEO LOROPS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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